Ed,

You described a geometry that calculates a draft angle of 8.5°.
My company has developed a "drafted sidewall process" with draft angle
<= 20° in the resist. (in SU-8 of course...)

If you want more details, specs and SEM-pictures about this process
please feel free to contact me at [email protected] I
will send you a pdf document that describes the capabilities.


Best regards,
Roger Bischofberger

applied microSWISS GmbH
Schoenfeldstrasse 7
CH-9470 Buchs
Switzerland
Tel: +41 81 740 0424
Fax: +41 81 740 0425

++ microstructures in silicon and metal ++
++ microstructured replication tools ++


> ------------------------------------------------------------------------
>
> Subject:
> [mems-talk] fabrication of cone structure with SU-8
> From:
> "Kapi, Sameena" 
> Date:
> Mon, 18 Oct 2004 11:04:02 -0400
> To:
> 
>
>
>Hello all,
>
>I am trying to fabricate a cone structure using SU-8, with the base of
>the cone (on the substrate surface) being approximately 50 microns, the
>height of the cone approximately 100 microns, and the tip of the cone
>approximately 20 microns across.  One method which was suggested was to
>expose a 100 micron SU-8 layer thru a mask with 20 micron holes using a
>DIVERGING light source - i.e. putting a concave lens in the path of a
>collimated light source in order to produce a "cone" of light - with the
>cone diverging to the desired width after the 100 micron thickness of
>the SU-8, thereby exposing a cone of SU-8 to produce the desired
>structure.  (The exposure time would have to be based on the required
>flux at the base of the structure, which means that the surface (point
>of cone) would be significantly overexposed.)  Does anyone have any
>experience. or suggestions, regarding this process?
>
>
>
>Thanks,
>
>Ed
>