I am not quite sure, but I guess your nitride is on top of the n+ poly-Si
for passivation. You want wet or dry etch? KOH is good for Si and BHF is
good for Si3N4. Dry etch you can use CF4/H2 or CF4/O2 depending on your
process parameters for selectivity. You can contact me for details.


Yours sincerely,

Isaac Chan

Ph.D. Candidate
Dept. Electrical & Computer Engineering
University of Waterloo
200 University Ave. W
Waterloo, Ontario, Canada
N2L 3G1
Tel: (519) 888-4567, ext. 6014
Fax: (519) 746-6321
[email protected]
http://www.ece.uwaterloo.ca/~a-sidic


On Mon, 25 Oct 2004, Guo X Mr (PG/R - Electronic Eng) wrote:

> dear all,
>
> I have a sample with a layer of 100nm a-Si (n+) covering 200nm Si3N4. After
laser anealing (may be poly-Si now), I want to etch it to form some islands.
Could you tell what eching processes are good for this?
>
>
> Thanks
>
> X. Guo
>
> University of Surrey, UK
> _______________________________________________
> [email protected] mailing list: to unsubscribe or change your list
> options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk
> Hosted by the MEMS Exchange, providers of MEMS processing services.
> Visit us at http://www.memsnet.org/
>