Lydia, maybe you want to reduce the RF power (DC bias) of your plasma
process? Is it forming RIE grass on your Si with your re-deposited
photoresist particles, so-called "black silicon"?


Yours sincerely,

Isaac Chan

Ph.D. Candidate
Dept. Electrical & Computer Engineering
University of Waterloo
200 University Ave. W
Waterloo, Ontario, Canada
N2L 3G1
Tel: (519) 888-4567, ext. 6014
Fax: (519) 746-6321
[email protected]
http://www.ece.uwaterloo.ca/~a-sidic

On Mon, 25 Oct 2004, Z.,W.Y.(Lydia) wrote:

> Dear all,
>
> When I preformed a plasma etching, i,e.,using CF4 etched Silicon Nitride
> (100nm) on top of silicon and the photo resist (OCG825) as a masking layer, I
> had a problem that the PR re-deposited to the opened (silicon) area. Under
> microscope, the opened (silicon) areas looked like light red. How can I get
> rid of this problem? Any advise are appreciated! BTW, my etcher is Technics
> West Inc., PE II-A Plasma System.
>
> Have a nice day!
>
> Lydia
>
>
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