Hey all,

I have a pattern on an aluminium-Al2O3 wafer  (array of holes of 50
microns). I want to etch out the aluminum that has been exposed by the
pattern.  The layer of aluminium on the aluminum oxide is about 700
microns.  Does anyone know what is the best photoresist that will last
in the RIE and how long should I leave the chips in the RIE to etch
out approximately 700 microns?   Also if anyone knows the chemistry
that I should use in the RIE to efficiently etch the aluminum and not
the Al2O3 would be very helpful.

Thank you everyone in advance.  You guys have been great help.

Vivek