We have run an ammonia free SiNx process at 210 KHz that produces ~225 MPa
of compressive stress (the temperature is around 350 deg C, pressure of 650
mtorr).  With a SiH4:NH4 film, you should be able to achieve a bit higher
stress with a comparable refractive index.  You can use Ramen Spectroscopy
to directly measure film stress of SiNx films.


Eric Miller
Laboratory Manager
Washington Technology Center
Ph:  206 616-3855
www.watechcenter.org


-----Original Message-----
From: [email protected] [mailto:[email protected]]
On Behalf Of Katharina Lilienthal
Sent: Tuesday, October 26, 2004 1:23 AM
To: General MEMS discussion
Subject: [mems-talk] Thin film stress measurement of Si3N4

Hallo,

my first question in MEMS- Talk is about Stress in thin films.
We deposit Si3N4 on Si-Wafer by LP-CVD. The thickness of the film is about
100nm. It is amorphous. In doing so, stress is produced, which we want to
measure. On one hand we already measure with Tencor Stress Analyser. On the
other hand we need a second method. There are only non-contact proceedings
considered. Do any other proceedings exist?

And the second question is, which experiences you have with PE-CVD. We want
to deposit on the tensile strength in the film of LP-CVD (described above) a
second film with compressive stress, using PE-CVD. These two films will
achieve a stressless deposit. But what about fequency, pressure, thickness
of film and stress? Which connection does between these parameters exist?

I would be very happy if you could provide further assistance!

sincerely yours
Katharina
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