Carsten,
One resist that meets your requirements would be AZ N6070, which is a nearly
transparent negative tone photoresist, which uses similar processing chemistry
to the AZP4000 and AZ9000 series (both positive resists).
General spin parameters - 3000 rpm will give ~7-8 µm film thickness. Bake would
be ~2.5 - 3 min at 110C.
Develop in AZ300MIF developer.
Best Regards,
Chad Brubaker
EV Group invent * innovate * implement
Technology - Tel: 480.727.9635, Fax: 480.727.9700 e-mail:
[email protected], www.EVGroup.com
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-----Original Message-----
From: [email protected] [mailto:[email protected]] On
Behalf Of Carsten Dehoff
Sent: Wednesday, October 27, 2004 7:30 AM
To: [email protected]
Subject: [mems-talk] Thick Photoresist with high transparency
Hi everybody,
does anyone know/have experience with a negative photo resist (and spin
parameters) for a 7-8 um thick PR film?
My problem is that the resist we are using right now is almost black so I
can hardly see my structures underneath the PR (when aligning).
Thanks!
Carsten
Aachen University
-----Original Message-----
From: [email protected] [mailto:[email protected]]
On Behalf Of [email protected]
Sent: Wednesday, October 27, 2004 2:16 AM
To: [email protected]
Subject: MEMS-talk Digest, Vol 24, Issue 34
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