Dear all

I will use a resist on a SiO2 thin layer on a Si substrate. I will perform
e-beam and single ion lithography to create nanoporous trough the resist.
Then I need to over-etch the SiO2 layer to produce an undercut. Finally I
will evaporate metal and lift off the resist. The problem is that using HF
to etch the SiO2 probably the resist can be affected. My question is what
resist I should use in this situation. PMMA is good for e-beam but I am not
sure if it is affected by HF. Could you help me?

Thanks a lot!

Daniel

University of Cambridge, UK