Hi Daniel

I have had some sucess bonding wafers using a sulphuric acid and hydrogen
peroxide 1:1 conditioning stage (put the sulfuric acid into the peroxide not the
other way round THIS IS IMPORTANT), followed by a DI water rinse before placing
the wafers together, if you leave the wafers just fusion bonded for at least 24
hours before heat treatment ~700-1000 degrees for 4 hours the yield will be
better and the bond will have less defects, to investigate the bonded wafers you
need a camera sensitive to near IR ~800-900nm and you can see light transmitted
through the wafer if there are any defects they show up as interferance
patterns.

Glenn Leighton BSc Hons, MSc
PhD Student
Building 70
Cranfield University
Cranfield
Bedfordshire
MK43 0AL
Tel: 01234 750111 extn 2465


________________________________

From: [email protected] on behalf of Danielq k
Sent: Wed 27/10/2004 20:26
To: [email protected]
Subject: [mems-talk] wafer bonding



Hi all
 Any one know how to bond two si wafers? what requirement in term of
heat, vacuum, chemical clean..
Thanks
Daniel
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