Hello.. everyone..
I am IL-HAN from Korea..

Is there any nice person who knows the etch rate of silicon dioxide and silicon
nitride in HF dry etching?
Both of materials are deposited by PECVD with silicon nitride (200nm) over
silicon oxide (400nm) on bare silicon.

My experiment result is that both materials etched away very well.
If anyone has any data about the etch rate for both materials in HF dry
etching...

please....!!

Thanks..