See JMEMS papers for etch rates of one PECVD oxide and two PECVD nitrides
in SF6+O2 and in CF4+O2 plasma. The nitrides etch faster in both in our
experiments.
The papers are online at
http://microlab.berkeley.edu/labmanual/chap1/1.5.html  .
Tables with all of the etchants are also online elsewhere.
    --Kirt Williams



----- Original Message -----
From: "황일한" 
To: 
Sent: Friday, October 29, 2004 7:50 AM
Subject: [mems-talk] HP dry etching of SiO2 and SiNx


>
> Hello.. everyone..
> I am IL-HAN from Korea..
>
> Is there any nice person who knows the etch rate of silicon dioxide and
silicon nitride in HF dry etching?
> Both of materials are deposited by PECVD with silicon nitride (200nm) over
silicon oxide (400nm) on bare silicon.
>
> My experiment result is that both materials etched away very well.
> If anyone has any data about the etch rate for both materials in HF dry
etching...
>
> please....!!
>
> Thanks..
>
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