Hi,

As fas as I know, it is better to have a silicon oxide layer between silicon
nitride layer and silicon substrate, to reduce the strain and thus improve the
quality. In our lab we use 350nm SiNx on 100nm SiO2 buffer from university
wafer, and this works well for us.

Hope this helps.

Fang

>Hi
>I am trying to etch silicon wafer in KOH to create 50 nm thick silicon
>nitride membranes. I am using 20 KOH at various tempretures. the
>membranes I am getting  often easily break in the process. Can anyone give some
advice how to proceed?. Which type of nitrade is the best for this
>application?
>
>Also, I would be grateful if someone could suggest a good and not very
expensive
>vendor
>who could provide me with the 4" silicon wafers ( preferably 300 mic
>thick) with 100nm  low stress LPCVD silicon nitride layer.
>Our in-house facilities produce  a very porous silicon nitrade films.
>Please reply directly to me at
>
>[email protected]
>
>Thanks in advance
>
>Maryla Krolikowska
>Australian National University
>
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