Hello all,

I am using 4" Si carriers for Cl2/BCl3 ECR dry etching of 2" GaAs substrates
with AlGaAs/GaAs VCSEL structures. I was wondering if it would be beneficial
to use a few hundred angstroms of Ni on the Si carriers to prevent
suffocation of the process.

Also, I am using a STR 1045 PR mask for the etching process, and have seen
results vary from beautiful to grassy (which is why I consider using a Ni
layer on Si). Does anyone have experience using PR masks for processes like
this? Any input on this would be very welcome.

Thank you in advance,


Jobert van Eisden
College of Nanoscale Science and Engineering
SUNY Albany