Dear All,

I have measured the dieletric constant of my thermally grown gate oxide on Si as
2.7 from CV measurement of MOS devices. Can some body suggest the possible cause
of such a low value. ideally it should be close to 3.8 or 3.9

Are there ways to improve the dielectric costant of SiO2 grown on Si by thermal
oxidation? I mean how can one grow good quality oxide on Si and are there any
effects of flow rate of oxygen being used?

Thanks in advance,

regards,
Amol Kumar Singh




--
_______________________________________________
Find what you are looking for with the Lycos Yellow Pages
http://r.lycos.com/r/yp_emailfooter/http://yellowpages.lycos.com/default.asp?SRC
=lycos10