Are you sure of your result?

Such a dramatic change should be reflected on the film stochiometry
(SixOy), dielectric strength (= Maximum breakdown field) and refractive
index. What do your ellipsometric measurements show re thickness and
refractive index?

Regards,
Pierre x286
-----Original Message-----
From: [email protected]
[mailto:[email protected]] On Behalf Of amol kumar singh
Sent: November 8, 2004 11:43
To: [email protected]
Subject: [mems-talk] quality of gate oxide (SiO2)

Dear All,

I have measured the dieletric constant of my thermally grown gate oxide
on Si as 2.7 from CV measurement of MOS devices. Can some body suggest
the possible cause of such a low value. ideally it should be close to
3.8 or 3.9

Are there ways to improve the dielectric costant of SiO2 grown on Si by
thermal oxidation? I mean how can one grow good quality oxide on Si and
are there any effects of flow rate of oxygen being used?

Thanks in advance,

regards,
Amol Kumar Singh




--
_______________________________________________
Find what you are looking for with the Lycos Yellow Pages
http://r.lycos.com/r/yp_emailfooter/http://yellowpages.lycos.com/default
..asp?SRC=lycos10

_______________________________________________
[email protected] mailing list: to unsubscribe or change your list
options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk
Hosted by the MEMS Exchange, providers of MEMS processing services.
Visit us at http://www.memsnet.org/