Dear Zhiyan,

I don't know what would help in stripping but next time when doing process
you should try to have good V profile in resist. If you are using one layer
of positive resist this is not possible. May I suggest following process.

1. Deposit 400nm SiO2
2. Spin and pattern your resist on SiO2
3. Etch your patterns to SiO2 with wet etchant
4. Deposit Ti/Au
5. Remove resist with acetone
6. Remove SiO2 with wet etchant

This is, in my opinion, good process for over 5um features. You can
probably do it with tools you can find in your lab. If you have dielectrics
on wafer maybe some other process is better. Like using image reversal
resist, two layer resist scheme or using negative resist.

Best regards,
Jukka Viheriala




                      zhiyanl
                      
                      state.edu>                cc:
                      Sent by:                  Subject:  [mems-talk] Metal
Lift-off
                      mems-talk-bounces@
                      memsnet.org


                      08.11.2004 19:10
                      Please respond to
                      General MEMS
                      discussion






Dear friends:

I got a trouble when doing metal lift-off with very small feature size. I
deposited Ti/Au on the patterned PR and then tried to lift off. The feature

size if about 8~10um. But even i soaked it in the acetone for very long
time,
the PR still can't be stripped off. It seems the metal not only covered the

top of the PR but also the side wall. I am wondering if you have any idea
and
suggestions on how to strip off the PR.

Thank you very much.

Zhiyan

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