Hello all,
I am hoping that people out there with experience with the DRIE process
could please tell me with what accuracy is it possible to get the DRIE
to stop in a silicon wafer? I am wanting to be able to etch up to 300 um
deep and be able to define a membrane thickness of 3 um with quite a
high degree of accuracy. Is this done by considering the etch rate?
Regards,
Cragi