Hello,  I am trying to etch through PECVD Silicon Nitride (nitride rich) that
has carbon nanotubes (CNTs) underneath the layer.  I would like to etch to
expose the CNTs.  I am looking for a dry etching, RIE or ICP, chemistry that
will etch the silicon nitride but not damage the CNTs.  Anything with oxygen is
immediately out of the picture because it will damage the CNTs once they are
exposed.  Can anyone recommend any other chemistry combinations to etch silicon
nitride?  I would like to have as straight of side walls as possible.    Thanks,
Marie