Hi Craig,
we use oxide wafers from which the oxide has been strippe on one side using
BOE, and then use a hot TMAH solution (~20%) to wet etch the backside down
to what we need.

Regards,

Jobert van Eisden
CNSE- SUNY Albany

-----Original Message-----
From: [email protected] [mailto:[email protected]]
On Behalf Of Craig Lowrie
Sent: Thursday, November 11, 2004 9:32 AM
To: [email protected]
Subject: [mems-talk] Wafer Thickness


Hello,

I am process restricted to using a 400 um thick silicon wafer but require a
thickness of 300 um.  Is there a possibility of using some kind of
post-processing "grinding" step or something similar to achieve this? What
would be the practical concerns of performing this if it is possible?

Regards,
Craig
_______________________________________________
[email protected] mailing list: to unsubscribe or change your list
options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk
Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us
at http://www.memsnet.org/