Dear MEMS-talk-listers,

  My provider ran in to a probem when
 etching Cu(2000nm)/W(100nm)/Si(base).
  Using APS-100 (Transene recipy) every-
 thing was destroyed when etching reached
 the Cu-W interface. Is this due to gal-
 vanic effects ????... I double-checked
 and APS-100 has the following spec.'s:
  2500 nm/min (Cu)
     0 nm/min (W)
  I am evidently puzzled how Cu was
 destroyed due to W, since APS-100 has
 a rather const. appetite for Cu anyway.
  Should they use something else ?

  What if we use Ti(100nm) as adhesion
 layer to the Si-substrate ? (Or Cr ?)
  What etchants combination should be
 used ?

  Any advice greatly appreciated !

  With many thanks,
  Octavian Dima




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