Hi Craig,

TMAH could effectively be a good solution but if you do not take care it
etches aluminium.
We have developped a process (by adding chemicals to TMAH) that is full CMOS
compatible.

We can do it for you if necessary.

Do not hesitate to contact me for any questions.

Not that back-grinding with protection of the front side is also the widely
used method.

Best regards

Frank TORREGROSA
R&D Manager
ION BEAM SERVICES (IBS)
ZI Peynier / Rousset
Rue Gaston Imbert Prolongée
F - 13790 Peynier
FRANCE
Tel : +33 (0)4 42 53 89 53
Fax :  +33 (0)4 42 53 89 59
Mail : [email protected]

----- Original Message -----
From: "Jobert van Eisden" 
To: "'General MEMS discussion'" 
Sent: Thursday, November 11, 2004 4:30 PM
Subject: RE: [mems-talk] Wafer Thickness


> Hi Craig,
> we use oxide wafers from which the oxide has been strippe on one side
using
> BOE, and then use a hot TMAH solution (~20%) to wet etch the backside down
> to what we need.
>
> Regards,
>
> Jobert van Eisden
> CNSE- SUNY Albany
>
> -----Original Message-----
> From: [email protected] [mailto:[email protected]]
> On Behalf Of Craig Lowrie
> Sent: Thursday, November 11, 2004 9:32 AM
> To: [email protected]
> Subject: [mems-talk] Wafer Thickness
>
>
> Hello,
>
> I am process restricted to using a 400 um thick silicon wafer but require
a
> thickness of 300 um.  Is there a possibility of using some kind of
> post-processing "grinding" step or something similar to achieve this? What
> would be the practical concerns of performing this if it is possible?
>
> Regards,
> Craig
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