When thinning with TMAH or KOH, bear in mind that the edges of the wafer can
get "ragged" (i.e. the edges will be irregullarly etched as well).  This may
not be a problem for you, but it can make the wafer very delicate and prone
to breaking.  If you are doing further processing, it might be an issue.
Protecting the masking layer on the edge of the wafer can help.

David Nemeth
Senior Engineer
Sophia Wireless, Inc.
14225-C Sullyfield Circle
Chantilly, VA
Ph: (703) 961-9573 x206
Fax:(703) 961-9576

-----Original Message-----
From: [email protected]
[mailto:[email protected]]On Behalf Of rakesh babu
Sent: Thursday, November 11, 2004 3:05 PM
To: General MEMS discussion
Subject: SPAM-LOW: Re: [mems-talk] Wafer Thickness


Craig,

  I would suggest the easiest way to thinning down the
wafer would be(pre processing) to dip it in TMAH. The
practical issue is roughening of the surface which you
can reduce by using a higher concentration of TMAH.

  Sincerely
  Rakesh


--- Craig Lowrie  wrote:

> Hello,
>
> I am process restricted to using a 400 um thick
> silicon wafer but
> require a thickness of 300 um.  Is there a
> possibility of using some
> kind of post-processing "grinding" step or something
> similar to achieve
> this? What would be the practical concerns of
> performing this if it is
> possible?
>
> Regards,
> Craig
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