Erik,

That's good news. Do you have any data/recommendation about the time
delay upon further exposure to air (after Transene Aluminum etchant A
has been rinsed (assuming deionized water), before the oxide regrows? I
am hoping that if I get my sample into the loadlock within 2 minutes of
the rinse, the native oxide layer will not have regrown.  Thanks.


Thomas E. Wilson
Professor of Physics and Physical Science
Marshall University
One John Marshall Drive
Huntington, WV  25755-2570
Telephone: 304.696.2752
FAX: 304.696.3243

"Four thousand holes in Blackburn, Lancashire
And though the holes were rather small
They had to count them all
Now they know how many holes it takes to fill the Albert Hall [Effect]"
- condensed-matter theorists Lennon and McCartney.




-----Original Message-----
From: [email protected]
[mailto:[email protected]] On Behalf Of Eric Woods
Sent: Monday, November 15, 2004 12:57 PM
To: [email protected]
Subject: [mems-talk] Re: aluminum etchant

 would recommend using Type A as well, at a lower temp (maybe 47C?)..
I have experience with multi-level CMOS metallization processes, and
we had that problem about Al native oxide reforming - a few seconds in
that etchant will knock out that native oxide.  I've also found that
BOE will attack Al203, but more slowly.

-Eric Woods
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