*****SPAM***** [mems-talk] Preparation of PZT thin film by Sol-gel
method
佟建华
2004-11-18
Dear friends,
I am preparing PZT piezoelectric thin films by sol-gel method on
Pt/Ti/SiO2/Si substrates,4000rpm,200deg prebaked for 5 min,anealed in atmosphere
at 600deg for 30 min. however, the surfaces of the PZT film are often cracked or
bubbly. the bubbles are caused by the bubbles of the Ti layer, Ti layer and SiO2
break away when the wafer with PZT layer was anealed in furnace, but they will
not break away when no PZT layer on wafer.Pt is 200nm and Ti is 50nm,SiO2 is
1um.
Does anyone know the reason. I appreciate your reply.
Tong
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* Jianhua Tong *
* MST Center of DUT P.R.China. 116023 *
* [email protected] *
* Tel.+86 411 84707713-8110 *
* 2004-11-18 *
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