Hi!
To deposit Al of similar thickness on organic layers for OLEDs,
to avoid damaging of organics we use thermal evaporation
starting with rate of 1 - 2 A/s for about 150A
and then we rise up to 8 - 10 A/s.
We obtain resistivity 5e-6 ohm cm.

Paolo Tassini



-----Messaggio Originale-----
Da: "Andrew Xiang" 
A: "Isaac Wing Tak Chan" ; "General MEMS
discussion" 
Data invio: sabato 27 novembre 2004 0.39
Oggetto: Re: [mems-talk] optimal Al deposition rate on photoresist


> Sorry , it is 1500A. not 150A.  We are doing Al evaporation deposition
rate
> of 100A /s , wonder if we should reduce the rate to improve the film
> quality?
>
> thanks
> Andrew
>
>
>
> ----- Original Message -----
> From: "Isaac Wing Tak Chan" 
> To: "Andrew Xiang" ; "General MEMS discussion"
> 
> Sent: Friday, November 26, 2004 4:36 PM
> Subject: Re: [mems-talk] optimal Al deposition rate on photoresist
>
>
> > Andrew,
> >
> > Higher dep rate usually means more voids in a PVD film. Why would you
need
> > high dep rate if your target thickness is only 150A?
> >
> >
> > Isaac
> >
> > On Fri, 26 Nov 2004, Andrew Xiang wrote:
> >
> >> Is there an optimal aluminum evaporation deposition rate on top of
> >> photoresist? Target thickness is 150A.
> >> Does faster deposition rate mean better film structure? more resistant
to
> >> corrosion?
> >>
> >> thanks
> >> Andrew
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