Hi,
I would like to protect the NiSi2/NiSi from HF solution
we shoud use a HF solution for etching a oxide layer (TEOS 2um),
and Ni2Si/NiSi silicide layers are attacked by the solution.
49% HF, 7:1 BOE, 10:1 dilute HF(with D.I.)... all oxide etchant have low etch
selectivity
between the silicide and oxide layer. Does anyone has experience on this?

Thanks in advance for your help,
Best Regards, TaeJune