Hello there,

I would like to deep etch all the way through a silicon wafer, which is
bonded to a PYREX wafer, by STS ASE Etcher.
The silicon wafer is about 200 or 300 microns thick. The narrowest gap of my
pattern is around 10-20 microns.

Is there anyone have the experience on doing this kind of etching before?
What is the thickness of PR to be used?
What is the process condition you have done? or just make it by PROCESS-B
standard? If you guys have any idea
please feel free to advice/suggest me. It'd be appriciated so much.

Thank you,
Badin