Hello All,

            I have question regarding silicon etching in 40% KOH
solution.  I am trying to produce v-goorves of 400 micrometer depth
but the silicon di oxide layer is of only 1 micrometer thick which is
not sufficienct enough. Could any one tell why would any one not
prefer to use silicon di oxide layer more than 1 micrometer thick. Are
there any reason that would not allow me to use thicker silicon di
oxide layer. I would really appreciate if any one could mail me back.

Thank you All,
Dhanamjaya R Guda
Louisiana State University.