Isotropic plasma etch of oxide selectively over nitride
Powell, Olly
2005-03-07
Hi there,
Would anybody know a way to isotropically dry etch at least SiO2 without
etching nitride (I need a selectivity of at least 10:1). Wet etching
works well enough in BHF, but ultimately I would like a dry etch in a
barrel etcher. To make matters worse I would like to try it first in
our RIE system with minimised DC bias (as I don't have a barrel etcher
yet).
Cheers
Olly
Origin Energy Solar