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MEMSnet Home: MEMS-Talk: how to prevent the natural oxide formation onpoly-Sifilm for tr
how to prevent the natural oxide formation onpoly-Sifilm for tr
2005-03-21
Pierre Huet
2005-03-21
[email protected]
how to prevent the natural oxide formation onpoly-Sifilm for tr
Pierre Huet
2005-03-21
It depends upon how thick an oxide you can tolerate. A thin ~ 1 nm SiOx
layer will form within ~ 1 minute in air. Very difficult to avoid...
even if transport is done in an inert atmosphere, the exposure to air
prior to transport has to be avoided.

Regards,
Pierre x286

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