A MEMS Clearinghouse® and information portal
for the MEMS and Nanotechnology community
RegisterSign-In
MEMSnet Home About Us What is MEMS? Beginner's Guide Discussion Groups Advertise Here
News
MEMSnet Home: MEMS-Talk: Deep etching in Si
Deep etching in Si
1997-12-30
Stephen L. Kwiatkowski
Deep etching in Si
Stephen L. Kwiatkowski
1997-12-30
Hello,

We need to etch a pattern in silicon wafers.  The requirements for this
pattern are the following.
1. The etch depth is: (case a) 100 micrometers +/- 1 micrometer,
(case b) 200 micrometers +/- 2 micrometers.
2. The etch pattern is an array of 2 mm wide slots on a 1.0 mm spacing
3. Vertical side-walls to within 0.01 radians.
4. Smooth side-wall surfaces, roughness less than 0.5 micrometers.
5. Smooth bottom surface, roughness less than 0.5 micrometers
6. The inside corner where the side-wall meets the bottom surface needs
to be a clear-and-free 90 degree angle +/- 0.5 degrees.

Our questions are:
1. Does current silicon etching technology meet these requirements?
2. Are there vendors who will do this etching for us?

Thank you in advance for your replies.
Steve Kwiatkowski


reply
Events
Glossary
Materials
Links
MEMS-talk
Terms of Use | Contact Us | Search
MEMS Exchange
MEMS Industry Group
Coventor
Harrick Plasma
Tanner EDA
University Wafer
Process Variations in Microsystems Manufacturing
MEMStaff Inc.
Tanner EDA by Mentor Graphics