How are you? I do have two questions to ask.

1. First on annealing process after fusion bonding of oxidized patterned Si
wafers.
   Rapid thermal annealing vs. regular furnace use. Which gave you a better
result?
2. Second on fusion bonding of oxidized patterned Si wafers.
   Dried surface is required before bonding. Has anybody used Plasma wafer
   bonding method? If tried what are the gases that you have used? Externally
applied
   Plasma on each wafer then align & bond or Internally applied plasma & bond
after align?


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