Dear All,

Does any one know the possible lowest electronic resistivity of boron doped and
phosphorus doped SiGe after annealing? And I also found the non-uniformity of
electronic resistivity on the deposited SiGe layer by LPCVD, even after
annealing. I am wondering how I can do to render the distribution of electronic
resistivity more uniform.

Best Regards,

Wang Ziyang