Manjula,
    Based on extensive experience with LPCVD p- and a-Si, I would say
that your best bet would be look at the literature for poly-Si grown
around 588C for MEMS applications.  That material is only grown only a
few degrees above the phase change point, and I have gotten average
grain size measurements via AFM to be consistently around 20-30nm.
Therefore, I believe that data for LPCVD poly-Si grown at that
temperature should be within 20% of the parameters for pure a-Si, as I
have gotten comparable measurements using ellipsometry and free
carrier absorption for a-Si and p-Si at 588C.  Finally, the reason the
majority of the literature does not match yours is that usually a-Si
is actually a-Si:H or similar, which dramatically effects the
properties (the high hydrogen percentage, that is - LPCVD tends to
form with a much lower H content.
-Eric

 ---------- Forwarded message ----------
> From: "manjula raman" 

> I was in need of some electrical and optical characterization data for LPCVD
amorphous silicon.I get a lot of studies on aSi:H in literature, but have not
got the same for LPCVD aSi.If anyone can send me to some papers ,it would help
my work