> does any one know how the ICPCVD (inductively coupled plasma) works and is
> different from the CVD. How is it different from the High density plasma
> CVD? are they the same?

CVD relies on chemical reactions, while PVD is just "atomic pool billard".

But some design priciples for the sources are similar between HDP-CVD and
IPVD.

In IPVD, the plasma density and pressure are so high that metal atoms
sputtered from the target have ionizing collisions on their way to the
substrate. That way, their trajectories can be aligned using a DC bias
electrical field at the substrate.

You get the same effect (all incoming material arrives perpendicular to the
surface, so it will fill deep holes) as with mechanical alignment
(collimation, long throw), without the drawbacks in deposition rate
and particles.

best regards,

Klaus Beschorner
Metron Technology, European Applications Manager
Drosselweg 6,71120 Grafenau,Germany. Tel +49-7033-45683