Jiang Ziling wrote:
> usually 1A/sec is suitable if you want really good quality film.
> If for contacting pads, you can increase to 0.5nm/sec.

>On 4/14/05, Andrew Xiang  wrote:
>>What is a good evap or ebeam rate for depositing 1500A Al?
>>Is it better to go slow or fast?1-10A/s or 50-100A/s?

Of course this depends on your vacuum level, at ~ 1e-6 you have a
monolayer or so/sec of background depositing on your wafer surface,  so
if you are depositing  1 A/sec, then you are getting a lot of junk in
your film. The faster the better for purity.  Of course the faster the
more stress.  So, you have to watch slow rates in not so good vacuum.