My experience is that the dielectric breakdown properties are getting
very poor. I tried a 300 nm thermally grown oxide film on an heavily
phosphorus doped Si wafer and I got dielectric breakdown at about 10
volts. I think that a lot of the phosphorous diffuse into the oxide
film.

Florian Krogmann

-----Ursprüngliche Nachricht-----
Von: John Chiaverini

I'm wondering if there are any deleterious effects on oxide quality when
the oxide is thermally grown on heavily-doped silicon (boron is the
dopant).  Does anyone have any experience with this?  My guess is that it
would be a small effect, but I want to make sure the breakdown and
dielectric properties are close to usual thermal oxide.  Any info would be
appreciated.