Hi,
Can some body help me to know
(1) whether etching of silcon dioxide in Hot HF is an accepted practice  to
increase the etch rate?
(2)Or alternqatively, any other combination is available?
(3)What may the required concentration of either  boron or Phosphorus or bothy
in Silicondioxide to increse the etch rate?
(4) what can be the maximum etch rate that can be achieved?
(5) What are the possibel ways to relive the stress in deposited oxides? Is a
long anneal may be few hours is acceptable?

Subrahmanyam