Charles,

Your biggest challenge will be to induce sufficient migration within the
Silicon wafer to allow freeing up of some of the silicon atoms to bond
with oxygen in the glass.  It may be too thick at 2000A, but you best
bet will be to operate at a somewhat higher temperature from your
current process (~50C higher - this will probably put you in the 400 -
450C range), and start off with as high a voltage as you can manage (I'm
not sure what your system maxes at - an EVG520 will max at 2000V, to
give you an idea of where you probably want to be).  You may be able to
reduce this voltage requirement, but my suggestion is to start high, and
work down.  The biggest concern will be electrical arc, but if your
system has a current limit (ours is 50 mA), that should be minimized.

Best Regards,
Chad Brubaker

 -----Original Message-----
From:   Charles
Subject: Anodic bonding oxidized Silicon wafers to Glass

We have sucessfully bonded pyrex 7740 and borofloat glasses to bare
silicon wafer many times (so we have the equipment and some
understanding). We are now developing a process which requires attaching
pyrex 7740 glass to an oxidized silicon wafer.  The oxide will be 200nm
or so thick.  Does anyone have experience with this type of anodic
bonding? Is it possible? Any suggestions?