Hello Charles,

It should be possible to bond a oxidized silicon wafer with glass. But keep
in mind that oxide is an insulating layer, hence it will lower your electric
field at interface. This means for you that a higher voltage and temperature
is necessary in comparison to standard anodic bonding (Si-Glass). Of course
the optimum voltage and temperature is depending on the thickness of your
oxide layer and kind of oxide (PECVD- or thermal oxide?). For 200nm I would
apply -1000V at 400C, if it does not work then increase the voltage. Another
drawback will be the bonding time, it will take longer to bond.


Best Regards,
Volkan Cetin