What kind of device structure do you have? If it is an MIS
[metal(silicon)/insulator(dielectric)/metal(copper or TaN and copper)
structure then you can carry out C-V measurements for devices with and
without(just Cu as top metal) TaN. The shift in fflatband voltage(if at all)
will indicate Cu diffusion or not.
Niv
----- Original Message -----
From: "PATEL JITENDRA" 
Subject: [mems-talk] TaN thin film as Barrier for Copper diffusion

I am using a TaN thin film as a barrier to protect my wafer against
Copper diffusion. I was wondering if anyone has any information
regarding way to test my thin film. My annealing temperature is 350 C.
Please email me any papers, or any documents you have at
[email protected]. Thanks in advance for your help....