I grew 1.5micron of oxide on a bare silicon wafer using LPCVD at 1100degC.
I need to reduce the residual stress within this film in order to prevent
buckling of the beams I will be etching into the film.  There is a
compressive stress of approximately 70MPa.  Does anyone know at what
temperature and for how long I should anneal?  I'm thinking I need to anneal
at no less than 1300degC.  Thanks for the assistance.

Eric