A MEMS Clearinghouse® and information portal
for the MEMS and Nanotechnology community
RegisterSign-In
MEMSnet Home About Us What is MEMS? Beginner's Guide Discussion Groups Advertise Here
News
MEMSnet Home: MEMS-Talk: bonding technique for mems device in high vacuum
bonding technique for mems device in high vacuum
2005-05-24
Y. Zhang
2005-05-24
Shay Kaplan
bonding technique for mems device in high vacuum
Shay Kaplan
2005-05-24
What are the wafer  and bond surfaces materials?
shay

-----Original Message-----
From: Y. Zhang
Subject: [mems-talk] bonding technique for mems device in high vacuum

I am looking for a proper bonding and packaging technique for my mems
device.  The requirements are: 1, the device will works in high vacuum
(10e-9); 2, the device have to be baked at 200C for 1-2 days; 3, the cap
wafer contains a thin silicon membrane and 4th, the bottom wafer has
electroplated structure and therefore i wouldn't expect a very clean
surface.
reply
Events
Glossary
Materials
Links
MEMS-talk
Terms of Use | Contact Us | Search
MEMS Exchange
MEMS Industry Group
Coventor
Harrick Plasma
Tanner EDA
Harrick Plasma, Inc.
Mentor Graphics Corporation
Nano-Master, Inc.
MEMStaff Inc.