A MEMS Clearinghouse® and information portal
for the MEMS and Nanotechnology community
RegisterSign-In
MEMSnet Home About Us What is MEMS? Beginner's Guide Discussion Groups Advertise Here
News
MEMSnet Home: MEMS-Talk: C4F8 clean
C4F8 clean
2005-05-31
sanky
2005-05-31
[email protected]
C4F8 clean
[email protected]
2005-05-31
I would use an Oxygen/Nitrogen ratio of 100sccm:10sccm at about 300 watts rie
power/1200 watts ICP powerat around 1 torr. I don't know if the signal will work
or not on your end point system. Bob Henderson

-----Original Message-----
From: sanky 
Subject: [mems-talk] C4F8 clean

I was wondering if anyone knew how to clean a RIE chamber after using C4F8
plasma.
My C4F8 processing conditions are about 400 W, 10mtorr, 20 sccm and the chamber
gap is 4 cm and diameter is 60 cm.
I use C4F8 for about half n hour. So i am wondering if a 1-1 C4F8 / O2 clean
time wud be enough....
Also i have a OES hooked up to the chamber, so i was wondering if monitoring the
emission between 200 to 600 nm would give me a clean trace of the chamber.
reply
Events
Glossary
Materials
Links
MEMS-talk
Terms of Use | Contact Us | Search
MEMS Exchange
MEMS Industry Group
Coventor
Harrick Plasma
Tanner EDA
The Branford Group
University Wafer
MEMS Technology Review
Tanner EDA by Mentor Graphics