Hi,

I need help from you guys.

I am dealing with the structure with PR (8 um) on top,
Si dioxide (0.4 um), then silicon substrate.

After developing, I did dry etching of oxide.
The problem  is; after etching, the sidewall (PR) is
not vertical.

Can you have a idea to keep sidewall vertical after
oxide etching?

Any information will be appreciated.

Xiaodong