Hi,
     Does your oxide etch process include O2?  If so, that is probably
contributing the lion's share to your PR erosion.

-Lou

>From: xiaodong wang 
>Subject: [mems-talk] To achive vertical sidewall of PR after dry etching
>ofoxide
>Date: Fri, 17 Jun 2005 12:40:18 -0700 (PDT)

>I am dealing with the structure with PR (8 um) on top,
>Si dioxide (0.4 um), then silicon substrate.
>
>After developing, I did dry etching of oxide.
>The problem  is; after etching, the sidewall (PR) is
>not vertical.
>
>Can you have a idea to keep sidewall vertical after
>oxide etching?