Hi, everyone.

I'm planning to make a SiO2 passivation film on a patterned ITO on a
glass by PECVD.

And I want to pattern (selectively etch) the SiO2 without sacrificing
the electrical properties of the lower part ITO.

I've heard that HF (hydrofluoric acid) etches ITO as well as SiO2.

So I don't know whether HF is okay with this kind of process or not.

Could anybody tell me the best way to pattern the SiO2 on an ITO?

Thank you in advance.

- Jaemin Lee.