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MEMSnet Home: MEMS-Talk: S1813: time and temperature hardbake before Si DRIE
S1813: time and temperature hardbake before Si DRIE
2005-07-25
Michael D Martin
S1813: time and temperature hardbake before SiDRIE
2005-07-25
Shile
S1813: time and temperature hardbake before Si DRIE
Michael D Martin
2005-07-25
Julie,
   If your etch profile needs to be absolutely vertical and you have small
features you might not want a vertical resist profile. The resist at the edge of
your features will charge up during the etch and may cause footing at the top of
the hole. When STS installed our system, we spent considerable time optimizing
the angle of the resist profile in order to get high quality small features.
Seems like the angle was ~45 deg.
  In general though, I agree with Robert. I think you are re-flowing the resist,
so try lowering your temperature and increasing the bake time.

Good luck,
    Mike


>>> [email protected] 07/22/05 3:18 PM >>>
Try doing a 110 deg post exposure bake instead of a hardbake, or do a 110
deg PEB and a 100 deg hardbake.  Usually a hardbake is not necessary for
plasma etch with S1813.

Robert
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