Dear fellow

I have tried to make poly diode (N+/P)on oxide with

1. a-Si + 1050C anneal
2. poly + 1050C anneal
3. poly

It is expecetd condition1 gives best diode leakage as
bigger grain size. However, it is opposite. Anyone
have experience on poly diode and any recommendation(
except laser anneal as equipment limitation) to reduce
didoe leakage

thanks

Roy Lam