Dear all,

I need to optimise the recipe of CHF3/O2 dry etch for Si3N4. The following
parameters: throttle pressure, gas flow rate and RF power level can be
adjusted. What values of these parameters are suitable for the first try?
Are there any guidelines?

Many thanks for any help.

--
Daxiang Zhou
PhD candidate
Semiconductor Physics Group
Cavendish Laboratory
University of Cambridge