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MEMSnet Home: MEMS-Talk: Photoresist for Lift-off process
Photoresist for Lift-off process
2005-08-02
Richard Chang
2005-08-03
Bill Moffat
2005-08-05
Brubaker Chad
2005-08-08
Huy Vo
KOH Wet Etching of Si wafers
2005-08-09
Daniel Park
2005-08-10
Shay Kaplan
2005-08-12
Christian Schröder
2005-08-12
Josef Kouba
2005-08-09
Wilson, Thomas
2005-08-11
Boyd Evans
Photoresist for Lift-off process
Huy Vo
2005-08-08
Lift-off process can be done with just about any kind of photoresist (+ or -
but not SU8). To get the right type of resist one needs to know the critical
dimensions of the patterns among other things .... I used S1813 for
lift-off, spin it @ 1500 rpm if the thickness of the film is less than 2000
A. If you want to expedite the lift-off process afterward, ultrasonic bath
will do the job in 30 seconds.

Happy processing

Huy





Hi, All,

  Does anybody know what the photoresist are for lift-off process other
than Futurrex NR7-1500PY?
  I need to use lift-off process to pattern the sputtering silicon
dioixde layer. But I don't have NR7-1500 PY.
  Could I use two different photoresists, just normal positive
photoresists, to do the lift-off? I have S1813, AZP 4620, and AZP 4210.
  Is there guidance I should follow?
  Thanks.


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